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j/sst/u308 series siliconix s-52424erev. f, 14-apr-97 1 n-channel jfets j308 J309 j310 sst308 sst309 sst310 u309 u310 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 j310 2 to 6.5 25 8 24 sst308 1 to 6.5 25 8 12 sst309 1 to 4 25 10 12 sst310 2 to 6.5 25 8 24 u309 1 to 4 25 10 12 u310 2.5 to 6 25 10 24 features benefits applications excellent high frequency gain: gps 11.5 db @ 450 mhz very low noise: 2.7 db @ 450 mhz very low distortion high ac/dc switch off-isolation wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches description &#
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"1 0&##1 d s g to-236 (sot-23) 2 3 1 to-226aa (to-92) top view j308 J309 j310 d g s 1 2 3 top view sst308 (z8)* sst309 (z9)* sst310 (z0)* *marking code for to-236 top view u309 u310 d s g and case to-206ac (to-52) 1 23 updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70237. applications information may also be obtained via faxback, request document #70597.
j/sst/u308 series 2 siliconix s-52424erev. f, 14-apr-97 absolute maximum ratings gate-drain, gate-source voltage 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . gate current : (j/sst prefixes) 10 ma . . . . . . . . . . . . . . . . (u prefix) 20 ma . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 o from case for 10 sec.) 300 c . . . . . . . . . . . . . . . storage temperature : (j/sst prefixes) 55 to 150 c . . . . . . . . . . (u prefix) 65 to 175 c . . . . . . . . . . . . . . . operating junction temperature 55 to 150 c . . . . . . . . . . . . . . . . . . . . power dissipation : (j/sst prefixes) a 350 mw . . . . . . . . . . . . . (u prefix) b 500 mw . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c b. derate 4 mw/ c above 25 c specifications a for j/sst308, j/sst309 and j/sst310 limits j/sst308 j/sst309 j/sst310 parameter symbol test conditions typ b min max min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 35 25 25 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na 1 6.5 1 4 2 6.5 saturation drain current c i dss v ds = 10 v, v gs = 0 v 12 60 12 30 24 60 ma gate reverse current i gss v gs = 15 v, v ds = 0 v 0.002 1 1 1 na gate reverse current i gss t a = 125 c 0.001 1 1 1 a gate operating current i g v dg = 9 v, i d = 10 ma 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma v ds = 0 v j 0.7 1 1 1 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 10 ma 14 8 10 8 ms common-source output conductance g os s f = 1 khz 110 250 250 250 s common-source c i j 4 5 5 5 input capacitance c iss v ds = 10 v v gs = 10 v sst 4 pf common-source c v gs = 10 v f = 1 mhz j 1.9 2.5 2.5 2.5 pf reverse transfer capacitance c rss sst 1.9 equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv M hz high frequency common-gate g f f = 105 mhz 14 forward transconductance g fg f = 450 mhz 13 ms common-gate g f = 105 mhz 0.16 ms output conductance g og v ds = 10 v f = 450 mhz 0.55 common gate power gain d g s i d = 10 ma f = 105 mhz 16 common - gate power gain d g pg f = 450 mhz 11.5 db noise figure nf f = 105 mhz 1.5 db noise figure nf f = 450 mhz 2.7 notes a. t a = 25 c unless otherwise noted. nzb b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%. d. gain (g pg ) measured at optimum input noise match.
j/sst/u308 series siliconix s-52424erev. f, 14-apr-97 3 specifications a for u309 and u310 limits u309 u310 parameter symbol test conditions typ b min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 35 25 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na 1 4 2.5 6 v saturation drain current c i dss v ds = 10 v, v gs = 0 v 12 30 24 60 ma gate reverse current i gss v gs = 15 v, v ds = 0 v 0.002 0.15 0.15 na gate reverse current i gss t a = 125 c 0.001 0.15 0.15 a gate operating current i g v dg = 9 v, i d = 10 ma 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma , v ds = 0 v 0.7 1 1 v dynamic common-source forward transconductance g fs v ds = 10 v, i d = 10 ma 14 10 10 ms common-source output conductance g os s f = 1 khz 110 250 250 s common-source input capacitance c iss v ds = 10 v, v gs = 10 v 4 5 5 pf common-source reverse transfer capacitance c rss s gs f = 1 mhz 1.9 2.5 2.5 pf equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv M hz high frequency common-gate g f f = 105 mhz 14 forward transconductance g fg f = 450 mhz 13 ms common-gate g f = 105 mhz 0.16 ms output conductance g og v ds = 10 v i 10 a f = 450 mhz 0.55 common gate power gain d g i d = 10 ma f = 105 mhz 16 14 14 common - gate power gain d g pg f = 450 mhz 11.5 10 10 db noise figure nf f = 105 mhz 1.5 2 2 db noise figure nf f = 450 mhz 2.7 3.5 3.5 notes a. t a = 25 c unless otherwise noted. nzb b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%. d. gain (g pg ) measured at optimum input noise match.
j/sst/u308 series 4 siliconix s-52424erev. f, 14-apr-97 typical characteristics 100 05 4 3 1 80 20 0 50 40 10 0 drain current and transconductance vs. gate-source cutoff voltage gate leakage current output characteristics on-resistance and output conductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current v gs(off) gate-source cutoff voltage (v) v dg drain-gate voltage (v) i d drain current (ma) v gs(off) gate-source cutoff voltage (v) v ds drain-source voltage (v) saturation drain current (ma) i dss g fs forward transconductance (ms) gate leakage i g g fs forward transconductance (ms) drain current (ma) i d i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss t a = 55 c 25 c 125 c v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v v gs(off) = 3 v 60 40 2 30 20 100 3 5 4 1 80 0 300 240 120 60 0 60 40 20 2 0 180 r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds 06 31215 9 i gss @ 125 c t a = 125 c t a = 25 c 200 a 0.1 1 10 20 16 8 4 0 12 15 0 0.4 0.2 0.8 1 12 6 3 0 9 0.6 1.0 v g os i gss @ 25 c 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na v ds = 10 v f = 1 khz v gs(off) = 1.5 v 10 ma output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 1.2 v 0.4 v 1.6 v 0.8 v 30 0 0.4 0.2 0.8 1 24 12 6 0 18 0.6 2.0 v 2.4 v v gs(off) = 3 v r ds(on) drain-source on-resistance (k ) s) g output conductance ( i g @ i d = 10 ma 200 a
j/sst/u308 series siliconix s-52424erev. f, 14-apr-97 5 typical characteristics (cont'd) output characteristics v ds drain-source voltage (v) drain current (ma) i d 50 04 2810 40 20 10 0 30 6 2.4 v v gs = 0 v 0.4 v 0.8 v 1.2 v 1.6 v 2.0 v transfer characteristics v gs gate-source voltage (v) drain current (ma) i d 30 0 1.2 0.4 1.6 2 24 12 6 0 18 0.8 t a = 55 c v gs(off) = 1.5 v 125 c transfer characteristics v gs gate-source voltage (v) drain current (ma) i d 100 0 1.8 0.6 2.4 3 80 40 20 0 60 1.2 t a = 55 c 25 c v gs(off) = 3 v 125 c 30 0 1.2 1.6 0.4 2 24 12 6 0 0.8 18 transconductance vs. gate-source voltage v gs gate-source voltage (v) v gs(off) = 1.5 v t a = 55 c 125 c g fs forward transconductance (ms) 50 0 1.8 2.4 0.6 3 40 20 10 0 1.2 30 transconductance vs. gate-source voltage v gs gate-source voltage (v) t a = 55 c 25 c 125 c v gs(off) = 3 v g fs forward transconductance (ms) v gs(off) = 3 v v ds = 10 v v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v f = 1 khz 25 c 25 c output characteristics v ds drain-source voltage (v) drain current (ma) i d v gs = 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1.0 v 20 068 210 16 8 4 0 4 12 v gs(off) = 1.5 v
j/sst/u308 series 6 siliconix s-52424erev. f, 14-apr-97 typical characteristics (cont'd) 1 10 100 100 80 40 20 0 60 v gs(off) = 1.5 v v gs(off) = 3 v on-resistance vs. drain current i d drain current (ma) 110 0.1 100 80 40 20 0 60 i d drain current (ma) r l 10 v i d assume v dd = 15 v, v ds = 5 v v gs(off) = 1.5 v v gs(off) = 3 v a v voltage gain circuit voltage gain vs. drain current 15 0 12 16 20 4 12 6 3 0 9 8 common-source input capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz v ds = 5 v v gs gate-source voltage (v) common-source reverse feedback capacitance vs. gate-source voltage 10 0 12 20 16 4 8 4 2 0 6 8 v ds = 0 v f = 1 mhz v ds = 5 v v gs gate-source voltage (v) reverse feedback capacitance (pf) c rss 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma commongate g ig b ig input admittance vs. frequency f frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma commongate g fg b fg forward admittance vs. frequency f frequency (mhz) input capacitance (pf) c iss 200 500 200 500 a v g fs r l 1 r l g os r ds(on) drain-source on-resistance ( )
j/sst/u308 series siliconix s-52424erev. f, 14-apr-97 7 typical characteristics (cont'd) 10 100 1 k 100 k 10 k 20 16 8 4 0 12 equivalent input noise voltage vs. frequency i d = 1 ma v ds = 10 v i d = 10 ma f frequency (hz) 150 120 60 30 0 0.1 1 10 90 output conductance vs. drain current v gs(off) = 3 v i d drain current (ma) t a = 55 c 25 c 125 c 10 1 0.1 0.01 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma commongate b rg g rg +g rg reverse admittance vs. frequency f frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma commongate g og b og output admittance vs. frequency f frequency (mhz) 200 500 200 500 v ds = 10 v f = 1 khz nv e n / hz ) ( noise voltage s) g output conductance (

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